Simulating Power Semiconductor Devices Using Variable Model Levels
Enrico Santi, Liqing Lu, Zhyiang Chen, Jerry Hudgins and Alan Mantooth
Summer Computer Simulation Conference 2007 (SCSC 2007)
San Diego, California (USA), July 15-18, 2007
Abstract
Model levels for power semiconductor devices are described. For the case of an IGBT and p-i-n diode models, various model levels are presented. First-of-all, an averaged model that captures switching and conduction losses is developed. Then two different behavioral models are developed, which give different levels of accuracy in reproducing switching waveforms. A previously developed physics-based IGBT and diode model is used as a reference for these less accurate, but more computationally efficient models. These models are compared in terms of switching waveform accuracy, switching and conduction loss predictions, model complexity and simulation time.